1/2 www.rohm.com c 2009 rohm co., ltd. all rights reserved. 2009.06 - rev.c abbreviated symbol : k25 abbreviated symbol : k25 (1) gnd (2) in (3) out rohm : smt3 eiaj : sc-59 DTC124GKA (1) gnd (2) in (3) out rohm : umt3 eiaj : sc-70 dtc124gua ( 2 ) ( 1 ) 2.8 1.6 0.4 ( 3 ) 2.9 1.9 0.95 0.95 0.8 0.15 0.3min. 1.1 0.2 0.15 0.1min. 0.9 0.7 1.25 2.1 0.3 ( 3 ) 0.65 ( 2 ) 2.0 1.3 ( 1 ) 0.65 r b e : emitter c : collector b : base r=22k e c 100ma / 50v digital transistors (with built-in resistors) dtc124gua / DTC124GKA ? applications ? dimensions (unit : mm) inverter, interface, driver ? features 1) the built-in bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the input, and parasitic effects are almost completely eliminated. 2) only the on / off conditions need to be set for operation, making the device design easy. 3) higher mounting densities can be achieved. ? structure npn epitaxial planar silicon transistor (resistor built-in type) ? packaging specifications part no. package packaging type taping taping code basic ordering unit (pieces) umt3 dtc124gua t106 3000 DTC124GKA ? smt3 t146 3000 ? ? absolute maximum ratings (ta=25 ? c) ? inner circuit limits parameter symbol v cbo 50 50 200 150 ? 55 to +150 v v mw c c v ceo 5 v v ebo 100 ma i c p c tj tstg unit collector-base voltage collector-emitter voltage emitter-base voltage collector current collector power dissipation junction temperature storage temperature
2/2 www.rohm.com c 2009 rohm co., ltd. all rights reserved. 2009.06 - rev.c data sheet dtc124gua / DTC124GKA ? electrical characteristics (ta=25 ? c) ? characteristics of built-in transistor parameter collector-base breakdown voltage collector-emitter breakdown voltage emitter-base breakdown voltage collector cutoff current emitter cutoff current dc current transfer ratio collector-emitter saturation voltage emitter-base resistance transition frequency symbol bv cbo bv ceo bv ebo i cbo i ebo h fe v ce(sat) r f t min. 50 50 5 ? 140 56 ? 15.4 ? ? ? ? ? ? ? ? 22 250 ? ? ? 0.5 260 ? 0.3 28.6 ? v v i c = 50 a i c = 1ma i e = 330 a v cb = 50v v eb = 4v i c = 10ma, i b = 0.5ma i c = 5ma, v ce = 5v v ce = 10v, i e = ? 5ma, f = 100mhz ? v a a ? v k ? mhz typ. max. unit conditions ? electrical characteristic curves 1k 500 200 100 50 20 10 5 2 1 100 200 500 1m 2m 5m 10m 20m 50m 100m v ce = 5v fig.1 dc current gain vs. collector current dc current gain : h fe collector current : i c (a) ta = 100 c ta = 25 c ta = 40 c 1 500m 200m 100m 50m 20m 10m 5m 2m 1m 100 200 500 1m 2m 5m 10m 20m 50m 100m i c / i b = 20/1 fig.2 collector-emitter saturation voltage vs. collector current collector saturation voltage : v ce ( sat ) (v) collector current : i c (a) ta = 100 c ta = 25 c ta = 40 c
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